features trenchfet power mosfet: 2.5-v rated esd protected: 4000 v applications battery protection circuitry ? cell li-lon lib/lip battery packs sif902edz vishay siliconix new product document number: 72987 s-41794?rev. a, 04-oct-04 www.vishay.com 1 bi-directional n-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 0.022 @ v gs = 4.5 v 10.3 20 0.023 @ v gs = 4.0 v 10.0 91 20 0.026 @ v gs = 3.1 v 9.4 9.1 0.028 @ v gs = 2.5 v 9.0 marking code powerpak 2 x 5 s 1 s 1 g 1 s 2 s 2 g 2 1 2 3 4 5 6 maxyz ma: part # code xyz: lot traceability and date code ordering information: sif902edz-t1?e3 d 1 s 1 g 1 1.8 k d 2 s 2 g 2 1.8 k 2 mm absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 10.3 7.0 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 85 c i d 7.4 5.1 a pulsed drain current (v gs = 8 v) i dm 40 a continuous diode current (diode conduction) a i s 3.1 1.5 maximum power dissipation a t a = 25 c p d 3.5 1.6 w maximum power dissipation a t a = 85 c p d 1.8 0.86 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 30 36 maximum junction-to-ambient a steady state r thja 61 76 c/w maximum junction-to-case (drain) steady state r thjc 4.8 6.0 c/w notes a. surface mounted on 1? x 1? fr4 board.
sif902edz vishay siliconix new product www.vishay.com 2 document number: 72987 s-41794?rev. a, 04-oct-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.5 v gate body leakage i gss v ds = 0 v, v gs = 4.5 v 10 gate-body leakage i gss v ds = 0 v, v gs = 12 v 500 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 85 c 5 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 40 a v gs = 4.5 v, i d = 7.0 a 0.018 0.022 drain source on state resistance a r v gs = 4.0 v, i d = 6.5 a 0.019 0.023 drain-source on-state resistance a r ds(on) v gs = 3.1 v, i d = 4.0 a 0.021 0.026 v gs = 2.5 v, i d = 3.5 a 0.023 0.028 forward transconductance a g fs v ds = 10 v, i d = 7.0 a 38 s diode forward voltage a v sd i s = 3.1 a, v gs = 0 v 0.76 1.1 v dynamic b total gate charge q g 9.1 14 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 7.0 a 1.9 nc gate-drain charge q gd ds , gs , d 2.7 turn-on delay time t d(on) 1.7 2.6 rise time t r v dd = 10 v, r l = 10 2.3 3.5 s turn-off delay time t d(off) v dd = 10 v , r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 1.1 1.7 s fall time t f g 4.4 6.6 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0.0001 100 100,000 gate current vs. gate-source voltage 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.1 1 10 1,000 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 0 4 8 12 20 t j = 25 c t j = 150 c ? gate current (ma) i gss 10,000 0.01 0.001 16
sif902edz vishay siliconix new product document number: 72987 s-41794?rev. a, 04-oct-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 102030405060 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 012345 0 1 2 3 4 5 0246810 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 v gs = 5 thru 3.5 v 25 c t c = ? 55 c v ds = 10 v i d = 7.0 a v gs = 4.5 v i d = 7.0 a v gs = 4.5 v 125 c 2.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) on-resistance vs. junction t emperature t j ? junction temperature ( c) 2 v r ds(on) ? on-resiistance (normalized) 1.0 1.2 0.01 10 30 0 0.2 0.6 0.8 t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s t j = 25 c v gs = 2.5 v 1 0.1 0.4 3 v 1.5 v
sif902edz vishay siliconix new product www.vishay.com 4 document number: 72987 s-41794?rev. a, 04-oct-04 typical characteristics (25 c unless noted) ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 0.00 0.02 0.04 0.06 0.08 0.10 012345678 i d = 7.0 a threshold v oltage variance (v) v gs(th) t j ? temperature ( c) on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) 0 10 50 power (w) single pulse power, junction-to-ambient time (sec) 30 40 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 61 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 1000 1 0.01 0.001 20 safe operating area 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d 0.1 i dm limited *r ds(on) limited bv dss limited 10 100 t a = 25 c 1 ms 10 ms 100 ms dc 10 s 100 s 1 s 10 s 100 s v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
sif902edz vishay siliconix new product document number: 72987 s-41794?rev. a, 04-oct-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance single pulse vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?72987 .
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